proprietatibus productum
EXEMPLUM
PERSEQUOR
genus
Discrete Semiconductor Products
Transistor - FET, MOSFET - Single
manufacturer
Infineon Technologies
series
CoolGaN™
sarcina
Tape et Reel (TR)
Shear Band (CT)
Digi-Reel® Custom Reel
Product Status
fiebat
FET type
N channel
technologia
GaNFET (Gallium Nitride)
Exhaurire-Source Voltage (Vdss)
600V
Current at 25° F - Continua Exhaurire (Id)
31A (Tc).
Coegi intentione (Max Rds On, Min Rds On)
-
On-resistentia (max) in diversis Id, Vgs
-
Vgs (th) (maximam) in diversis Ids
1,6V @ 2,6mA
Vgs (max)
-10V
Input capacitance (Ciss) in diversis Vds (max)
380pF @ 400V
FET function
-
Virtus dissipatio (max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
genus institutionem
Superficiem Monte Type
Supplementum Fabrica Packaging
PG-DSO-20-87
Sarcina / clausura
20-PowerSOIC (0.433″, 11.00mm latum)
Basic productum numerus
IGOT60
Media and Downloads
RESOURCE EXEMPLUM
LINK
Specifications
IGOT60R070D1
GaN Electio Guide
CoolGaN™ 600 V e-modus GaN HEMTs Brevis
Alia documenta cognata
Gan in Adaptors / scutulas
Gan in Servo et Telecom
Realiability et Qualification of CoolGaN
quare CoolGaN'
Gan in Wireless dato
video file
CoolGaN™ 600V e-modus HEMT-pons aestimatio dimidia pontis featuring GaN EiceDRIVER™
CoolGaN™ - novae virtutis paradigma
2500 W plenus-pons totem polus PFC aestimatio tabula utens CoolGaN™ 600 V
HTML Specifications
CoolGaN™ 600 V e-modus GaN HEMTs Brevis
IGOT60R070D1
Environment et Exporting Classification
ATTRIBUTES
PERSEQUOR
RoHS status
Obsequium ROHS3 specificationem
Humorem Sensitivum Level (MSL)
III (CLXVIII horas)
SPATIUM status
Non products SPATIUM
ECCN
EAR99
HTSUS
8541.29.0095
